مؤتمر
Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-situ ALD Digital O3 Treatment
| العنوان: | Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-situ ALD Digital O3 Treatment |
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| المؤلفون: | Yeh, M.-S., Luo, G.-L., Hou, F.-J., Sung, P.-J., Wang, C.-J., Su, C.-J., Wu, C.-T., Huang, Y.-C., Hong, T.-C., Chao, T.-S., Chen, B.-Y., Chen, K.-M., Izawa, M., Miura, M., Morimoto, M., Ishimura, H., Lee, Y.-J., Wu, W.-F., Yeh, W.-K. |
| المصدر: | 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :205-207 Mar, 2018 |
| Relation: | 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781538637128 9781538637111 |
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| DOI: | 10.1109/EDTM.2018.8421457 |