دورية أكاديمية
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
| العنوان: | Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates |
|---|---|
| المؤلفون: | Chandrasekar, H., Kumar, S., Ganapathi, K.L., Prabhu, S., Dolmanan, S.B., Tripathy, S., Raghavan, S., Bhat, K.N., Mohan, S., Muralidharan, R., Bhat, N., Nath, D.N. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(9):3711-3718 Sep, 2018 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2018.2856773 |