The role of the spacer oxide in determining worst-case hot-carrier stress conditions for NMOS LDD devices

التفاصيل البيبلوغرافية
العنوان: The role of the spacer oxide in determining worst-case hot-carrier stress conditions for NMOS LDD devices
المؤلفون: King, E.E., Lacoe, R.C., Wang-Ratkovic, J.
المصدر: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Reliability physics Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International. :83-92 2000
Relation: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780358600
9780780358607
DOI:10.1109/RELPHY.2000.843895