مؤتمر
The role of the spacer oxide in determining worst-case hot-carrier stress conditions for NMOS LDD devices
العنوان: | The role of the spacer oxide in determining worst-case hot-carrier stress conditions for NMOS LDD devices |
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المؤلفون: | King, E.E., Lacoe, R.C., Wang-Ratkovic, J. |
المصدر: | 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Reliability physics Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International. :83-92 2000 |
Relation: | 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780358600 9780780358607 |
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DOI: | 10.1109/RELPHY.2000.843895 |