دورية أكاديمية
${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz
| العنوان: | ${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz |
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| المؤلفون: | Jo, H., Baek, J., Yun, D., Son, S., Lee, J., Kim, T., Kim, D., Tsutsumi, T., Sugiyama, H., Matsuzaki, H. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 39(11):1640-1643 Nov, 2018 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2018.2871221 |