دورية أكاديمية
3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability
| العنوان: | 3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability |
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| المؤلفون: | Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F.M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B.T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(11):5165-5171 Nov, 2018 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2018.2871265 |