"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP (/spl lambda/-1.53-1.55 /spl mu/m) laser diodes

التفاصيل البيبلوغرافية
العنوان: "On-wafer" surface implanted high power, picosecond pulse InGaAs/InP (/spl lambda/-1.53-1.55 /spl mu/m) laser diodes
المؤلفون: Paraskevopoulos, A., Hensel, H.-J., Schelhase, S., Frahm, J., Kubler, J., Denker, A., Gubenko, A., Portnoi, E.L.
المصدر: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) Indium phosphide and related materials Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on. :278-281 2000
Relation: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780363205
9780780363205
تدمد:10928669
DOI:10.1109/ICIPRM.2000.850286