التفاصيل البيبلوغرافية
العنوان: |
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack |
المؤلفون: |
Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., Chang, E. Y. |
المصدر: |
2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :47-48 Jun, 2018 |
Relation: |
2018 IEEE Symposium on VLSI Technology |
قاعدة البيانات: |
IEEE Xplore Digital Library |