First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

التفاصيل البيبلوغرافية
العنوان:	First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
المؤلفون:	Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., Chang, E. Y.
المصدر:	2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :47-48 Jun, 2018
Relation:	2018 IEEE Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library