Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

التفاصيل البيبلوغرافية
العنوان:	Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
المؤلفون:	Avasarala, Naga Sruti, Donadio, G. L., Witters, T., Opsomer, K., Govoreanu, B., Fantini, A., Clima, S., Oh, H., Kundu, S., Devulder, W., van der Veen, M. H., Van Houdt, J., Heyns, M., Goux, L., Kar, G. S.
المصدر:	2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :209-210 Jun, 2018
Relation:	2018 IEEE Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library