دورية أكاديمية
Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime
العنوان: | Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime |
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المؤلفون: | Upadhyay, A.K., Kushwaha, A.K., Rastogi, P., Chauhan, Y.S., Vishvakarma, S.K. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(12):5468-5474 Dec, 2018 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2018.2877631 |