دورية أكاديمية

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

التفاصيل البيبلوغرافية
العنوان: Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime
المؤلفون: Upadhyay, A.K., Kushwaha, A.K., Rastogi, P., Chauhan, Y.S., Vishvakarma, S.K.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(12):5468-5474 Dec, 2018
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2018.2877631