Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage

التفاصيل البيبلوغرافية
العنوان: Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage
المؤلفون: Stathis, J.H., Vayshenker, A., Varekamp, P.R., Wu, E.Y., Montrose, C., McKenna, J., DiMaria, D.J., Han, L.-K., Cartier, E., Wachnik, R.A., Linder, B.P.
المصدر: 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) VLSI technology VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on. :94-95 2000
Relation: 2000 Symposium on VLSI Technology. Digest of Technical Papers
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780363051
9780780363052
DOI:10.1109/VLSIT.2000.852783