مؤتمر
A 2.5 V, 20 Gbyte/s 288 M packet-based DRAM with enhanced cell efficiency and noise immunity
| العنوان: | A 2.5 V, 20 Gbyte/s 288 M packet-based DRAM with enhanced cell efficiency and noise immunity |
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| المؤلفون: | Kyung, K.-H., Lee, H.-C., Song, K.-W., Song, H.-S., Jung, K.-W., Lee, D.-Y., Kim, C., Cho, S.-I. |
| المصدر: | 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103) VLSI circuits VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on. :112-115 2000 |
| Relation: | 2000 Symposium on VLSI Circuits. Digest of Technical Papers |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780363094 9780780363090 |
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| DOI: | 10.1109/VLSIC.2000.852865 |