دورية أكاديمية
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
| العنوان: | Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs |
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| المؤلفون: | Joshi, V., Tiwari, S.P., Shrivastava, M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(1):570-577 Jan, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2018.2878787 |