InGaN/GaN Light-Emitting Diodes with Designed Top Electrode: Models and Simulation

التفاصيل البيبلوغرافية
العنوان: InGaN/GaN Light-Emitting Diodes with Designed Top Electrode: Models and Simulation
المؤلفون: Khmyrova, I., Nishidate, Y., Kholopova, J., Polushkin, E., Kovalchuk, A., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.
المصدر: 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Advanced Semiconductor Devices and Microsystems (ASDAM), 2018 12th International Conference on. :1-4 Oct, 2018
Relation: 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538674901
9781538674895
تدمد:24749737
DOI:10.1109/ASDAM.2018.8544517