مؤتمر
First Principles Investigation of Al2O3 γ-Ga2O3 Interface Structures
| العنوان: | First Principles Investigation of Al2O3 γ-Ga2O3 Interface Structures |
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| المؤلفون: | Park, Junsung, Hong, Sung-Min |
| المصدر: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :314-317 Sep, 2018 |
| Relation: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781538667903 |
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| تدمد: | 19461577 |
| DOI: | 10.1109/SISPAD.2018.8551693 |