مؤتمر
First Principles Investigation of Al2O3 γ-Ga2O3 Interface Structures
العنوان: | First Principles Investigation of Al2O3 γ-Ga2O3 Interface Structures |
---|---|
المؤلفون: | Park, Junsung, Hong, Sung-Min |
المصدر: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :314-317 Sep, 2018 |
Relation: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
كن أول من يترك تعليقا!