The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study

التفاصيل البيبلوغرافية
العنوان: The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study
المؤلفون: Lee, Jaehyun, Berrada, Salim, Carrillo-Nunez, Hamilton, Medina-Bailon, Cristina, Adamu-Lema, Fikru, Georgiev, Vihar P., Asenov, Asen
المصدر: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :280-283 Sep, 2018
Relation: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538667903
تدمد:19461577
DOI:10.1109/SISPAD.2018.8551697