High Mobility 4H-SiC MOSFET

التفاصيل البيبلوغرافية
العنوان: High Mobility 4H-SiC MOSFET
المؤلفون: O'Neill, A., Arith, F., Urresti, J., Vasilevskiy, K., Wright, N., Olsen, S.
المصدر: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-4 Oct, 2018
Relation: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538644409
9781538644393
9781538644416
DOI:10.1109/ICSICT.2018.8564911