High-performance ($\text{EOT} < 0.4\text{nm}$, Jg∼10−7 A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor

التفاصيل البيبلوغرافية
العنوان:	High-performance ($\text{EOT} < 0.4\text{nm}$, Jg∼10−7 A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
المؤلفون:	Popovici, M., Belmonte, A., Oh, H., Potoms, G., Meersschaut, J., Richard, O., Hody, H., Van Elshocht, S., Delhougne, R., Goux, L., Kar, G. Sankar
المصدر:	2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :2.7.1-2.7.4 Dec, 2018
Relation:	2018 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library