Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

التفاصيل البيبلوغرافية
العنوان:	Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
المؤلفون:	Florent, K., Pesic, M., Subirats, A., Banerjee, K., Lavizzari, S., Arreghini, A., Di Piazza, L., Potoms, G., Sebaai, F., McMitchell, S. R. C., Popovici, M., Groeseneken, G., Van Houdt, J.
المصدر:	2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :2.5.1-2.5.4 Dec, 2018
Relation:	2018 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library