التفاصيل البيبلوغرافية
العنوان: |
Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory |
المؤلفون: |
Florent, K., Pesic, M., Subirats, A., Banerjee, K., Lavizzari, S., Arreghini, A., Di Piazza, L., Potoms, G., Sebaai, F., McMitchell, S. R. C., Popovici, M., Groeseneken, G., Van Houdt, J. |
المصدر: |
2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :2.5.1-2.5.4 Dec, 2018 |
Relation: |
2018 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: |
IEEE Xplore Digital Library |