دورية أكاديمية
Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test
| العنوان: | Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test |
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| المؤلفون: | Kuboyama, S., Mizuta, E., Nakada, Y., Shindou, H. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1710-1714 Jul, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2019.2902871 |