دورية أكاديمية
Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power Electronics
| العنوان: | Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power Electronics |
|---|---|
| المؤلفون: | Zhang, W., Ragab, T., Basaran, C. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(4):1971-1978 Apr, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2019.2896315 |