دورية أكاديمية
The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs
العنوان: | The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs |
---|---|
المؤلفون: | Khachatrian, A., Buchner, S., Koehler, A., Affouda, C., McMorrow, D., LaLumondiere, S.D., Dillingham, E.C., Bonsall, J.P., Scofield, A.C., Brewe, D.L. |
المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1682-1687 Jul, 2019 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189499 15581578 |
---|---|
DOI: | 10.1109/TNS.2019.2910493 |