مؤتمر
Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
العنوان: | Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability |
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المؤلفون: | Ouyang, Q., Chen, X.D., Mudanai, S., Kencke, D.L., Wang, X., Tasch, A.F., Register, L.F., Banerjee, S.K. |
المصدر: | 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on. :151-154 2000 |
Relation: | 2000 International Conference on Simulation of Semiconductor Processes and Devices |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780362799 9780780362796 |
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DOI: | 10.1109/SISPAD.2000.871230 |