Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability

التفاصيل البيبلوغرافية
العنوان: Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
المؤلفون: Ouyang, Q., Chen, X.D., Mudanai, S., Kencke, D.L., Wang, X., Tasch, A.F., Register, L.F., Banerjee, S.K.
المصدر: 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on. :151-154 2000
Relation: 2000 International Conference on Simulation of Semiconductor Processes and Devices
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780362799
9780780362796
DOI:10.1109/SISPAD.2000.871230