التفاصيل البيبلوغرافية
العنوان: |
Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs |
المؤلفون: |
Mahmud, M. Iqbal, Gupta, A., Toledano-Luque, M., Mavilla, N., Johnson, J., Srinivasan, P., Zainuddin, A., Rao, S., Cimino, S., Min, B., Nigam, T. |
المصدر: |
2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-6 Mar, 2019 |
Relation: |
2019 IEEE International Reliability Physics Symposium (IRPS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |