Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs

التفاصيل البيبلوغرافية
العنوان: Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs
المؤلفون: Mahmud, M. Iqbal, Gupta, A., Toledano-Luque, M., Mavilla, N., Johnson, J., Srinivasan, P., Zainuddin, A., Rao, S., Cimino, S., Min, B., Nigam, T.
المصدر: 2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-6 Mar, 2019
Relation: 2019 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538695043
تدمد:19381891
DOI:10.1109/IRPS.2019.8720535