دورية أكاديمية
Avalanche Ruggedness Capability and Improvement of 5-V n-Channel Large-Array MOSFET in BCD Process
العنوان: | Avalanche Ruggedness Capability and Improvement of 5-V n-Channel Large-Array MOSFET in BCD Process |
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المؤلفون: | Nidhi, K., Ker, M., Lee, J., Huang, S. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(7):3040-3048 Jul, 2019 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2019.2916032 |