دورية أكاديمية
$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
| العنوان: | $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz |
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| المؤلفون: | Xia, Z., Xue, H., Joishi, C., Mcglone, J., Kalarickal, N.K., Sohel, S.H., Brenner, M., Arehart, A., Ringel, S., Lodha, S., Lu, W., Rajan, S. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(7):1052-1055 Jul, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2019.2920366 |