Impact of SiON tunnel layer composition on 3D NAND cell performance

التفاصيل البيبلوغرافية
العنوان: Impact of SiON tunnel layer composition on 3D NAND cell performance
المؤلفون: Breuil, L., Nyns, L., Banerjee, K., Palayam, S. Vadakupudhu, Subirats, A., Richard, O., Conard, T., Van den Bosch, G., Furnemont, A.
المصدر: 2019 IEEE 11th International Memory Workshop (IMW) Memory Workshop (IMW), 2019 IEEE 11th International. :1-4 May, 2019
Relation: 2019 IEEE 11th International Memory Workshop (IMW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728109817
9781728109800
تدمد:25737503
DOI:10.1109/IMW.2019.8739714