دورية أكاديمية
Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory
| العنوان: | Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory |
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| المؤلفون: | Ali, T., Polakowski, P., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Zimmermann, K., Biedermann, K., Eng, L.M., Seidel, K., Muller, J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(8):3356-3364 Aug, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2019.2921618 |