دورية أكاديمية
The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation
| العنوان: | The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation |
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| المؤلفون: | Jahdi, S., Hedayati, M., Stark, B.H., Mellor, P.H. |
| المصدر: | IEEE Transactions on Industrial Electronics IEEE Trans. Ind. Electron. Industrial Electronics, IEEE Transactions on. 67(6):4556-4566 Jun, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 02780046 15579948 |
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| DOI: | 10.1109/TIE.2019.2922918 |