دورية أكاديمية
An Analytical Drain Current Model for the Cylindrical Channel Gate-All-Around Heterojunction Tunnel FETs
| العنوان: | An Analytical Drain Current Model for the Cylindrical Channel Gate-All-Around Heterojunction Tunnel FETs |
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| المؤلفون: | Keighobadi, D., Mohammadi, S., Fathipour, M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(8):3646-3651 Aug, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2019.2922232 |