التفاصيل البيبلوغرافية
| العنوان: |
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric |
| المؤلفون: |
Zhao, Xinyuan, Xu, J. P., Liu, L., Lai, P.T., Tang, W. M. |
| المصدر: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2019 IEEE International Conference on. :1-3 Jun, 2019 |
| Relation: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
