التفاصيل البيبلوغرافية
| العنوان: |
High Crystalline Quality of Si0.5 Ge0.5 Layer Grown on a Novel Three-layer Strain Relaxed Buffer |
| المؤلفون: |
Zhao, Zhiqian, Li, Yongliang, Wang, Guilei, Li, Yan, Wang, Wenwu |
| المصدر: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2019 IEEE International Conference on. :1-3 Jun, 2019 |
| Relation: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
