التفاصيل البيبلوغرافية
العنوان: |
E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm |
المؤلفون: |
Li, Qian, An, Ning, Zeng, Jian-Ping, Jiang, Jun, Li, Li |
المصدر: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2019 IEEE International Conference on. :1-3 Jun, 2019 |
Relation: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) |
قاعدة البيانات: |
IEEE Xplore Digital Library |