E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm

التفاصيل البيبلوغرافية
العنوان: E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm
المؤلفون: Li, Qian, An, Ning, Zeng, Jian-Ping, Jiang, Jun, Li, Li
المصدر: 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2019 IEEE International Conference on. :1-3 Jun, 2019
Relation: 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728102863
DOI:10.1109/EDSSC.2019.8754410