مؤتمر
Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
| العنوان: | Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth |
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| المؤلفون: | Kosugi, Ryoji, Ji, Shiyang, Mochizuki, Kazuhiro, Adachi, Kohei, Segawa, Satoshi, Kawada, Yasuyuki, Yonezawa, Yoshiyuki, Okumura, Hajime |
| المصدر: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :39-42 May, 2019 |
| Relation: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781728105802 9781728105819 9781728105796 |
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| تدمد: | 19460201 |
| DOI: | 10.1109/ISPSD.2019.8757632 |