مؤتمر
In-memory Reinforcement Learning with Moderately-Stochastic Conductance Switching of Ferroelectric Tunnel Junctions
| العنوان: | In-memory Reinforcement Learning with Moderately-Stochastic Conductance Switching of Ferroelectric Tunnel Junctions |
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| المؤلفون: | Berdan, Radu, Marukame, Takao, Kabuyanagi, Shoichi, Ota, Kensuke, Saitoh, Masumi, Fujii, Shosuke, Deguchi, Jun, Nishi, Yoshifumi |
| المصدر: | 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T22-T23 Jun, 2019 |
| Relation: | 2019 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9784863487192 |
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| تدمد: | 21589682 |
| DOI: | 10.23919/VLSIT.2019.8776500 |