A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

التفاصيل البيبلوغرافية
العنوان:	A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
المؤلفون:	Arimura, H., Cott, D., Boccardi, G., Loo, R., Wostyn, K., Brus, S., Capogreco, E., Opdebeeck, A., Witters, L., Conard, T., Suhard, S., Van Dorp, D., Kenis, K., Ragnarsson, L.-A., Mitard, J., Holsteyns, F., De Heyn, V., Mocuta, D., Collaert, N., Horiguchi, N.
المصدر:	2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T92-T93 Jun, 2019
Relation:	2019 Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library