High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band

التفاصيل البيبلوغرافية
العنوان:	High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
المؤلفون:	Xu, Shengqiang, Han, Kaizhen, Huang, Yi-Chiau, Kang, Yuye, Masudy-Panah, Saeid, Wu, Ying, Lei, Dian, Zhao, Yunshan, Gong, Xiao, Yeo, Yee-Chia
المصدر:	2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T176-T177 Jun, 2019
Relation:	2019 Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library