Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation

التفاصيل البيبلوغرافية
العنوان: Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation
المؤلفون: Borland, John, Chaung, Shang-Shiun, Tseng, Tseung-Yuen, Lee, Yao-Jen, Joshi, Abhijeet, Basol, Bulent, Kuroi, Takashi, Goodman, Gary, Khapochkima, Nadya, Buyuklimanli, Temel
المصدر: 2018 22nd International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2018 22nd International Conference on. :101-105 Sep, 2018
Relation: 2018 22nd International Conference on Ion Implantation Technology (IIT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538668283
9781538668290
9781538668276
DOI:10.1109/IIT.2018.8807954