مؤتمر
Ultrathin (2.7 nm) oxy-nitride for suppressing boron penetration characterized by direct hole tunneling current in p+/pMOS
| العنوان: | Ultrathin (2.7 nm) oxy-nitride for suppressing boron penetration characterized by direct hole tunneling current in p+/pMOS |
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| المؤلفون: | Chih-hsing Yu, Ming-chen Chen, Min-hwa Chi |
| المصدر: | 2000 Semiconductor Manufacturing Technology Workshop (Cat. No.00EX406) Semiconductor manufacturing technology Semiconductor Manufacturing Technology Workshop, 2000. :99-106 2000 |
| Relation: | 2000 Semiconductor Manufacturing Technology Workshop |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780363744 9780780363748 |
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| DOI: | 10.1109/SMTW.2000.883090 |