Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs

التفاصيل البيبلوغرافية
العنوان: Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs
المؤلفون: Perkins, S., Antoniou, M., Tiwari, Amit K., Arvanitopoulos, A., Gyftakis, K. N., Trajkovic, T., Udrea, F., Lophitis, N.
المصدر: 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), 2019 IEEE 12th International Symposium on. :358-363 Aug, 2019
Relation: 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728118321
DOI:10.1109/DEMPED.2019.8864919