DC and Noise Analysis of Si and 3C-SiC based IMPATTs at W-Band

التفاصيل البيبلوغرافية
العنوان: DC and Noise Analysis of Si and 3C-SiC based IMPATTs at W-Band
المؤلفون: Mukhopadhyay, S. J., Mitra, M.
المصدر: 2018 IEEE MTT-S International Microwave and RF Conference (IMaRC) Microwave and RF Conference (IMaRC), 2018 IEEE MTT-S International. :1-4 Nov, 2018
Relation: 2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538682210
9781538682203
تدمد:23779152
DOI:10.1109/IMaRC.2018.8877100