دورية أكاديمية
Comparison of Si3N4–SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
| العنوان: | Comparison of Si3N4–SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects |
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| المؤلفون: | Choi, W.Y., Lee, C.H., Kim, Y.H., Park, K.K. |
| المصدر: | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control IEEE Trans. Ultrason., Ferroelect., Freq. Contr. Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on. 67(4):879-882 Apr, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 08853010 15258955 |
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| DOI: | 10.1109/TUFFC.2019.2950902 |