دورية أكاديمية
Design and Optimization of 1.2-kV SiC Planar Inversion MOSFET Using Split Dummy Gate Concept for High-Frequency Applications
| العنوان: | Design and Optimization of 1.2-kV SiC Planar Inversion MOSFET Using Split Dummy Gate Concept for High-Frequency Applications |
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| المؤلفون: | Vudumula, P., Kotamraju, S. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(12):5266-5271 Dec, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2019.2949459 |