دورية أكاديمية
Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation
| العنوان: | Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation |
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| المؤلفون: | Arimura, H., Cott, D., Boccardi, G., Loo, R., Wostyn, K., Witters, L., Conard, T., Suhard, S., van Dorp, D., Dekkers, H., Ragnarsson, L., Mitard, J., De Heyn, V., Mocuta, D., Collaert, N., Horiguchi, N. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(12):5387-5392 Dec, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2019.2950332 |