TCAD predictions of hot-electron injection in p-type LDMOS transistors

التفاصيل البيبلوغرافية
العنوان: TCAD predictions of hot-electron injection in p-type LDMOS transistors
المؤلفون: Giuliano, F., Tallarico, A. N., Reggiani, S., Gnudi, A., Sangiorgi, E., Fiegna, C., Rossetti, M., Molfese, A., Manzini, S., Depetro, R., Croce, G.
المصدر: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2019 49th European. :86-89 Sep, 2019
Relation: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728115399
تدمد:23786558
DOI:10.1109/ESSDERC.2019.8901703