Simulation study of a novel current limiting device: a vertical 6H-SiC etched AccuJFET

التفاصيل البيبلوغرافية
العنوان:	Simulation study of a novel current limiting device: a vertical 6H-SiC etched AccuJFET
المؤلفون:	Tournier, D., Planson, D., Godigon, P., Locatelli, M.L., Chante, J.P., Sarrus, F.
المصدر:	2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) Semiconductor conference Semiconductor Conference, 2000. CAS 2000 Proceedings. International. 1:201-204 vol.1 2000
Relation:	2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	0780358856 9780780358850
DOI:	10.1109/SMICND.2000.890218