مؤتمر
Stacking SiO2/ High-$K$ Dielectric Material in 30nm Junction-less Nanowire Transistor Optimized Using Taguchi Method for Lower Leakage Current
| العنوان: | Stacking SiO2/ High-$K$ Dielectric Material in 30nm Junction-less Nanowire Transistor Optimized Using Taguchi Method for Lower Leakage Current |
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| المؤلفون: | Rasol, M. F. M., Hamid, F. K. A., Johari, Zaharah, Alias, N. Ezaila, Ismail, Razali |
| المصدر: | 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2019 IEEE Regional Symposium on. :1-4 Aug, 2019 |
| Relation: | 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781728104607 9781728104591 |
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| تدمد: | 26394642 |
| DOI: | 10.1109/RSM46715.2019.8943545 |